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 MBR1630 thru MBR1645
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45
MBR1630 MBR1635 MBR1640 MBR1645
Symbol I(AV) IFSM dv/dt VF IR ROJC CJ TJ TSTG
Characteristics Maximum Average Forward Rectified Current @TC=125oC
Maximum Ratings 16 150 10000 IF=16A @TJ=25oC IF=16A @TJ=125oC @TJ=25oC @TJ=125oC 0.63 0.57 0.2 40 1.5 450 -55 to +150 -55 to +175
Unit A A V/us V mA
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range
C/W pF
o o
C C
NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any
MBR1630 thru MBR1645
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
20
PEAK FORWARD SURGE CURRENT, AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
16
100
12 8
RESISTIVE OR INDUCTIVE LOAD
50
4
8.3ms Single Half-Sine-Wave (JEDEC METHOD)
0
0 1 2 5 10 20 50 100
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS REVERSE CURRENT ,(mA)
100
TJ = 100 C
10
10
1.0
TJ = 75 C
1.0
0.1
TJ = 25 C
TJ = 25 C PULSE WIDTH 300us 2% Duty cycle
0.01 0 20 40 60 80 100 120 140
0.1 0.1 0.2 0.3 0.4 0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACITANCE , (pF)
1000
TJ = 25 C F= 1MHz
100 0.1 1 4 10 100
REVERSE VOLTAGE , VOLTS


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